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Cited article:

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties

Landolt-Börnstein - Group III Condensed Matter, Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties a 1 (2001)
https://doi.org/10.1007/10551045_46

Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys

G. M. Laws, E. C. Larkins, I. Harrison, C. Molloy and D. Somerford
Journal of Applied Physics 89 (2) 1108 (2001)
https://doi.org/10.1063/1.1320007

Optical and Electronic Properties of the Nitrides of Indium, Gallium and Aluminium and the Influence of Native Defects

T. L. Tansley and R. J. Egan
MRS Proceedings 242 (1992)
https://doi.org/10.1557/PROC-242-395

On the connection between the building of aluminium nitride ceramics and its dielectric properties

V. V. Lopatin and A. V. Kabyshev
Physica Status Solidi (a) 116 (1) 221 (1989)
https://doi.org/10.1002/pssa.2211160120

Epitaxially grown AlN and its optical band gap

W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg and S. L. Gilbert
Journal of Applied Physics 44 (1) 292 (1973)
https://doi.org/10.1063/1.1661876

On the preparation, optical properties and electrical behaviour of aluminium nitride

G.A. Cox, D.O. Cummins, K. Kawabe and R.H. Tredgold
Journal of Physics and Chemistry of Solids 28 (4) 543 (1967)
https://doi.org/10.1016/0022-3697(67)90084-4

Space charge conduction and electrical behaviour of aluminium nitride single crystals

J. Edwards, K. Kawabe, G. Stevens and R.H. Tredgold
Solid State Communications 3 (5) 99 (1965)
https://doi.org/10.1016/0038-1098(65)90231-0

Herstellung der Nitride von Bor, Aluminium, Gallium und Indium nach dem Aufwachsverfahren

Th. Renner
Zeitschrift für anorganische und allgemeine Chemie 298 (1-2) 22 (1959)
https://doi.org/10.1002/zaac.19592980106