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Cited article:

The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates

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Studies on dislocation and surface morphology of Al Ga1−N/GaN heterostructures grown by MOCVD

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Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

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Structure and mechanical properties of Ni–Cr alloy produced by single roll strip casting

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Materials & Design 31 (1) 570 (2010)
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Revealing of planar defects and partial dislocations in large synthetic diamond crystals by the selective etching

Alexander F. Khokhryakov and Yuri N. Palyanov
Journal of Crystal Growth 306 (2) 458 (2007)
https://doi.org/10.1016/j.jcrysgro.2007.05.028

Zum Mechanismus der Versetzungsätzung I. Die Bildung zweidimensionaler Lochkeime an den Enden von Versetzungslinien

W. Schaarwächter
physica status solidi (b) 12 (1) 375 (1965)
https://doi.org/10.1002/pssb.19650120137

Surface reaction of iron with solutions of phosphorus organic compounds

J. Llopis, L. Arizmendi, J.M. Gamboa, V. Martínez-Vilche and P. Perez-Fernández
Corrosion Science 5 (4) 319 (1965)
https://doi.org/10.1016/S0010-938X(65)90647-5

Role of Defects in Evaporated Silver Films on the Nucleation of Sulfide ``Patches''

V. A. Phillips
Journal of Applied Physics 33 (2) 712 (1962)
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Appearance of dislocations in metal crystals on evaporation: Twinning dislocations and their relation to annealing twins in copper

E Votava and A Berghezan
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