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Cited article:

Magnetic susceptibility of p-Si(B) single crystals grown in “vacancy” regime at presence of thermodonors created by thermal treatments at 450 °C

V. M. Babych
Semiconductor physics, quantum electronics and optoelectronics 11 (3) 226 (2008)
https://doi.org/10.15407/spqeo11.03.226

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

Landolt-Börnstein - Group III Condensed Matter, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements 41A2a 1 (2002)
https://doi.org/10.1007/10681604_139

On the nature of deep donors created at 450 °C in boron-doped p-Si

V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa and G. Yu. Rudko
Physica Status Solidi (a) 157 (2) 405 (1996)
https://doi.org/10.1002/pssa.2211570224

Radioactivation analysis of oxygen in high-purity silicon by irradiation with α-particles

K. Saito, T. Nozaki, S. Tanaka, M. Furukawa and Cheng Hwasheng
The International Journal of Applied Radiation and Isotopes 14 (7) 357 (1963)
https://doi.org/10.1016/0020-708X(63)90119-4