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Cited article:
Jean Lagrenaudie
J. Chim. Phys., 53 (1956) 222-225
Published online: 2017-05-29
This article has been cited by the following article(s):
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42 (1961)
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M. Neuberger
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Herstellung der Nitride von Bor, Aluminium, Gallium und Indium nach dem Aufwachsverfahren
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M. Neuberger
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Epitaxially grown AlN and its optical band gap
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Optical Absorption Edge of AIN Single Crystals
J. Pastrňák and L. Roskovcová
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Point-defect energies in the nitrides of aluminum, gallium, and indium
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Lattice Vibration Spectra of Aluminum Nitride
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Richard J. Stirn
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Refraction Index Measurements on AlN Single Crystals
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Growth of high purity AlN crystals
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Progress and prospects of group-III nitride semiconductors
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Space charge conduction and electrical behaviour of aluminium nitride single crystals
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On the preparation, optical properties and electrical behaviour of aluminium nitride
G.A. Cox, D.O. Cummins, K. Kawabe and R.H. Tredgold
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Epitaxial growth of aluminum nitride
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Solid-State Electronics 10 (10) 1023 (1967)
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Optical and Electronic Properties of the Nitrides of Indium, Gallium and Aluminium and the Influence of Native Defects
T. L. Tansley and R. J. Egan
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