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Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys

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Herstellung der Nitride von Bor, Aluminium, Gallium und Indium nach dem Aufwachsverfahren

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DOI: 10.1002/zaac.19592980106
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Epitaxially grown AlN and its optical band gap

W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg and S. L. Gilbert
Journal of Applied Physics 44 (1) 292 (1973)
DOI: 10.1063/1.1661876
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Optical Absorption Edge of AIN Single Crystals

J. Pastrňák and L. Roskovcová
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U. Gürs and K. Gürs
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Point-defect energies in the nitrides of aluminum, gallium, and indium

T. L. Tansley and R. J. Egan
Physical Review B 45 (19) 10942 (1992)
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Lattice Vibration Spectra of Aluminum Nitride

A. T. Collins, E. C. Lightowlers and P. J. Dean
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DOI: 10.1103/PhysRev.158.833
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Richard J. Stirn
8 1 (1972)
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Refraction Index Measurements on AlN Single Crystals

J. Pastrňák and L. Roskovcová
physica status solidi (b) 14 (1) K5 (1966)
DOI: 10.1002/pssb.19660140127
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Growth of high purity AlN crystals

Glen A. Slack and T.F. McNelly
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Progress and prospects of group-III nitride semiconductors

S.N Mohammad and H Morkoç
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Space charge conduction and electrical behaviour of aluminium nitride single crystals

J. Edwards, K. Kawabe, G. Stevens and R.H. Tredgold
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On the preparation, optical properties and electrical behaviour of aluminium nitride

G.A. Cox, D.O. Cummins, K. Kawabe and R.H. Tredgold
Journal of Physics and Chemistry of Solids 28 (4) 543 (1967)
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On the connection between the building of aluminium nitride ceramics and its dielectric properties

V. V. Lopatin and A. V. Kabyshev
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Epitaxial growth of aluminum nitride

T.L. Chu, D.W. Ing and A.J. Noreika
Solid-State Electronics 10 (10) 1023 (1967)
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Optical and Electronic Properties of the Nitrides of Indium, Gallium and Aluminium and the Influence of Native Defects

T. L. Tansley and R. J. Egan
MRS Proceedings 242 (1992)
DOI: 10.1557/PROC-242-395
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