Articles citing this article

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Cited article:

Depth Profiles of Al/Mn/Si Multilayers

Chrystel Hombourger, Philippe Jonnard, Christiane Bonnelle, et al.
Microscopy Microanalysis Microstructures 8 (4-5) 287 (1997)
https://doi.org/10.1051/mmm:1997122

Al 3p valence and excitonic states in GaSb/Al0.3Ga0.7Sb and GaAs/Al0.3Ga0.7As heterostructures as a function of growth process

P. Jonnard, F. Vergand, C. Bonnelle, M. Leroux and J. Massies
Physical Review B 55 (23) 15727 (1997)
https://doi.org/10.1103/PhysRevB.55.15727

Importance of the mixing of valence states on adhesion at solid/solid interfaces

P. Jonnard, F. Vergand and C. Bonnelle
International Journal of Adhesion and Adhesives 17 (3) 263 (1997)
https://doi.org/10.1016/S0143-7496(97)00013-4

Study of the adhesion between a-CH films and TA6V substrates by electron-induced X-ray emission spectroscopy (EXES)

P. Jonnard, C. Tixier, J. Desmaison, C. Hombourger and C. Bonnelle
Thin Solid Films 306 (1) 119 (1997)
https://doi.org/10.1016/S0040-6090(97)00281-2

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

P.-F. Staub, C. Bonnelle, F. Vergand and P. Jonnard
Proceedings, annual meeting, Electron Microscopy Society of America 54 490 (1996)
https://doi.org/10.1017/S042482010016491X

Instrument for research on interfaces and surfaces

C. Bonnelle, F. Vergand, P. Jonnard, J.-M. André, P. F. Staub, P. Avila, P. Chargelègue, M.-F. Fontaine, D. Laporte, P. Paquier, A. Ringuenet and B. Rodriguez
Review of Scientific Instruments 65 (11) 3466 (1994)
https://doi.org/10.1063/1.1144524

Electron energy distributions at AuPd/alumina interfaces

M Kefi, P Jonnard, F Vergand, A Amamou and C Bonnelle
Journal of Physics D: Applied Physics 27 (9) 1952 (1994)
https://doi.org/10.1088/0022-3727/27/9/021

Aluminium valence and core excitonic states in GaAs-Ga0.7Al0.3As systems

F Vergand, P Jonnard, M Kefi, et al.
Journal of Physics: Condensed Matter 5 (11) 1691 (1993)
https://doi.org/10.1088/0953-8984/5/11/009