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Cited article:

Distribution des états d’interface et centres piégés associés aux joints de grains dans du silicium polycristallin : effets des recuits thermiques

N M’Gafad, H Amzil, M Pasquenelli

J. Chim. Phys., 88 (1991) 2211-2216

Published online: 2017-05-29

DOI: https://doi.org/10.1051/jcp/1991882211

PDF (629 KB)

This article has been cited by the following article(s):

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

N. M'Gafad, H. Amzil, D. Sayah, D. Ballutaud and M. Barbé
Solid-State Electronics 43 (5) 857 (1999)
https://doi.org/10.1016/S0038-1101(99)00011-8