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Cited article:

Oxidation of SiCf-SiC CMC cladding tubes for GFR application in impure helium atmosphere and materials interactions with tantalum liner at high temperatures up to 1600°C

M. Steinbrueck, V. Angelici Avincola, I.J. Markel, et al.
Journal of Nuclear Materials 517 337 (2019)
https://doi.org/10.1016/j.jnucmat.2019.02.024

Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy

William F. Seng and Peter A. Barnes
Materials Science and Engineering: B 72 (1) 13 (2000)
https://doi.org/10.1016/S0921-5107(99)00586-3

Calculations of cobalt silicide and carbide formation on SiC using the Gibbs free energy

William F Seng and Peter A Barnes
Materials Science and Engineering: B 76 (3) 225 (2000)
https://doi.org/10.1016/S0921-5107(00)00457-8

Tantalum carbide ohmic contacts to n-type silicon carbide

T. Jang, L. M. Porter, G. W. M. Rutsch and B. Odekirk
Applied Physics Letters 75 (25) 3956 (1999)
https://doi.org/10.1063/1.125506

Phase equilibria in M–X–X' and M–Al–X ternary systems (M = transition metal; X, X' = B, C, N, Si) and the crystal chemistry of ternary compounds

Aleksandr I Gusev
Russian Chemical Reviews 65 (5) 379 (1996)
https://doi.org/10.1070/RC1996v065n05ABEH000217

Reaction of Ta thin film with single crystalline (001) β-SiC

J. S. Chen, E. Kolawa, M.-A. Nicolet, R. P. Ruiz, L. Baud, C. Jaussaud and R. Madar
Journal of Applied Physics 76 (4) 2169 (1994)
https://doi.org/10.1063/1.357629